New negative differential resistance device based on resonant interband tunneling
نویسندگان
چکیده
منابع مشابه
Reliable GaN-based Resonant Tunneling Diodes with Reproducible Room-temperature Negative Differential Resistance
Resonant tunneling diode (RTD) is an electronic device embodying a unique quantum-interference phenomenon: negative differential resistance (NDR). Compared to other negative resistance devices such as (Esaki) tunnel and transferred-electron devices, RTDs operate much faster and at higher temperatures. III-nitride materials, composed of AlGaInN alloys, have wide bandgap, high carrier mobility an...
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Robust Si resonant interband tunnel diodes have been designed and tested that demonstrate as-grown negative differential resistance at room temperature with peak-to-valley current ratios (PVCR) up to 2.5 and peak current densities in the order of 1 kA/cm. The as-grown Si p þin þ structures were synthesised using solid source molecular beam epitaxy, incorporating B and P d-doped layers. Both str...
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We report experimental results of quantum transport through InAs/AlSb/GaSb/AlSb/InAs heterostructures having well widths of 7.0, 8.0, and 11.9 nm, respectively, in magnetic fields of up to 8.0 T aligned parallel to the epitaxial growth planes. Application of this resonant magnetotunneling spectroscopy technique allows the well subband dispersions to be probed along the wave vector perpendicular...
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Preface This report is a summary of the activities in the field of resonant tunneling device circuit design. (GMUD) during the first year of the Microelectronics Advanced Research Initiative projects ANSWERS (Autonomous Nanoelectronic Systems with Extended Replication and Signalling) and LOCOM (Logic Circuits with Reduced Complexity based on Devices with Higher Functionality). As part of the AN...
متن کاملDemonstration of negative differential resistance in GaN/AlN resonant tunneling diodes at room temperature
GaN/AlN resonant tunneling diodes RTD were grown by metal-organic chemical vapor deposition MOCVD and negative differential resistance with peak-to-valley ratios as high as 2.15 at room temperature was demonstrated. Effect of material quality on RTDs’ performance was investigated by growing RTD structures on AlN, GaN, and lateral epitaxial overgrowth GaN templates. Our results reveal that negat...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 1989
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.101715